lead-free gree n ds30927 rev. 2 - 2 1 of 5 DMN5L06DMK www.diodes.com diodes incorporated DMN5L06DMK dual n-channel enhancement mode field effect transistor features dual n-channel mosfet low on-resistance very low gate threshold voltage low input capacitance fast switching speed low input/output leakage ultra-small surface mount package lead free by design/rohs compliant (note 2) esd protected up to 2kv "green" device (note 4) qualified to aec-q101 standards for high reliability maximum ratings @ t a = 25 c unless otherwise specified a m j l d f b c h k mechanical data case: sot-26 case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: finish matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 marking: see page 2 ordering & date code information: see page 2 weight: 0.015 grams (approximate) new product esd protected up to 2kv characteristic symbol value units drain-source voltage v dss 50 v gate-source voltage v gss 20 v drain current (note 1) continuous pulsed (note 3) i d 305 800 ma total power dissipation (note 1) p d 225 mw thermal resistance, junction to ambient r ja 556 c/w operating and storage temperature range t j ,t stg -65 to +150 c note: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. 4. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. sot-26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d 0.95 f 0.55 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 0 8 all dimensions in mm s 1 d 1 d 2 s 2 g 1 g 2
notes: 5. short term duration test pulse used to minimize self-heating effect. ds30927 rev. 2 - 2 2 of 5 DMN5L06DMK www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 50 v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c i dss 60 na v ds = 50v, v gs = 0v gate-body leakage i gss 1 500 50 a na na v gs = 12v, v ds = 0v v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) 0.49 1.2 v v ds =v gs , i d = 250 a static drain-source on-resistance r ds (on) 3.0 2.5 2.0 v gs = 1.8v, i d = 50ma v gs = 2.5v, i d = 50ma v gs = 5.0v, i d = 50ma on-state drain current i d(on) 0.5 1.4 a v gs = 10v, v ds = 7.5v forward transconductance |y fs | 200 ms v ds =10v, i d = 0.2a source-drain diode forward voltage v sd 0.5 1.4 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss 25 pf reverse transfer capacitance c rss 5.0 pf 0 0.3 0.6 0.9 01 2 3 4 5 v ds , drain-source voltage (v) fi g .1 t y pical output characteristics i d , drain current (a) 1.2 1 .5 6v 10v 5v 3v 4v v=10v 8v 6v 5v 4v 3v gs 8v v , gate-source voltage (v) fi g .2 t y pical transfer characteristics gs 0.01 3 i, d drain current (a) 0.1 1 0 1 2 v = 10v pulsed ds t=-55c a t=-25c a t=125c a t=85c a t=25c a t=150c a new product
ds30927 rev. 2 - 2 3 of 5 DMN5L06DMK www.diodes.com new product t , channel temperature (c) fig. 3 gate threshold voltage vs. channel tem p erature ch 0 -55 -25 0 25 50 75 100 125 150 v gate threshold voltage (v) gs(th), 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 . 0 v = 10v i=1ma pulsed ds d 0.1 i drain current (a) fig. 4 static drain-source on-resistance vs. drain current d , 1 10 0.001 0.01 0.1 1 v = 10v pulsed gs t = 150 c a t=-55c a t=-25c a t=25c a t=125c a t=85c a 1 i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d 10 0.1 1 0.001 0.01 0.1 v=5v pulsed gs t=-55c a t=150c a t=-25c a t=25c a t = 125 c a t=85c a v gate source voltage (v) fig. 6 static drain-source on-resistance vs. gate-source volta g e gs, 0 0 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 . 0 2 4 6 8 10 12 14 16 18 t=25c pulsed a i = 140ma d i = 280ma d t , channel temperature ( c) fig. 7 ch static drain-source on-state resistance vs. channel tem p erature -50 -25 0 25 50 75 100 125 150 0 1 2 3 v = 10v pulsed gs i = 280ma d i = 140ma d i , reverse drain current (a) dr 0.001 0.01 0.1 0.5 0 1 1 v, fig. 8 reverse drain current vs. source-drain volta g e sd source-drain voltage (v) v=0v pulsed gs t=-55c a t=150c a t=-25c a t=25c a t=85c a t=125c a new product
ds30927 rev. 2 - 2 4 of 5 DMN5L06DMK www.diodes.com 1 0.001 0.01 0.1 1 0 i , reverse drain current (a) dr v, fig. 9 reverse drain current vs. source-drain volta g e sd source-drain voltage (v) 0.2 0.4 0.6 0.8 v=10v gs v=0v gs t = 25c pulsed a 1 i , drain current (a) d fig.10 forward transfer admittance vs. drain current |y |, forward transfer admittance (s) fs 0.001 0.01 0.1 0.01 0.1 1 v=10v pulsed ds t= a -55 c t= a -25 c t= a 150 c t= a 125 c t= a 85 c t=25c a -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) fi g . 11 deratin g curve - total a r=556c/w 0ja p , power dissipation (mw) d (note 6) ordering information device packaging shipping DMN5L06DMK-7 sot-26 3000/tape & reel notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. new product
important notice life support diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes witho ut further notice to any product herein. diodes incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written appr oval of the president of diodes incorporated. ds30927 rev. 2 - 2 5 of 5 DMN5L06DMK www.diodes.com new product marking information dab = marking code ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september date code key month jan feb mar apr may jun jul aug sep oct nov dec code 1234567 89 o nd dab ym s 1 d 2 g 1 d 1 s 2 g 2 year 2006 2007 2008 2009 code tu vw new product
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